BSP100,135 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  BSP100,135
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BSP100,135 Configuration: Single Dual Drain Continuous Drain Current: 3.2 A Current - Continuous Drain (id) @ 25?° C: 3.2A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 6nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 250pF @ 20V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 8.3W Power Dissipation: 8.3 W Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Resistance Drain-source Rds (on): 0.1 Ohms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.8V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.1 Ohms Fall Time: 15 ns Rise Time: 8 ns Factory Pack Quantity: 4000 Typical Turn-Off Delay Time: 21 ns Part # Aliases: /T3 BSP100 Other Names: 934033440135, BSP100 /T3
• Количество страниц
  8 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  91,27 KB

BSP100,135 datasheet скачать

BSP100,135 datasheet